Valence and atomic size dependent exchange barriers in vacancy-mediated dopant diffusion

J. S. Nelson; P. A. Schultz; A. F. Wright

doi:10.1063/1.121779

Valence and atomic size dependent exchange barriers in vacancy-mediated dopant diffusion

J. S. Nelson
, P. A. Schultz
, A. F. Wright

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

First-principles pseudopotential calculations of dopant-vacancy exchange barriers indicate a strong dependency on dopant valence and atomic size, in contrast to current models of vacancy-mediated dopant diffusion. First-row elements (B, C, N) are found to have exchange barriers which are an order of magnitude larger than the assumed value of 0.3 eV (the Si vacancy migration energy). © 1998 American Institute of Physics.

Original language	English
Pages (from-to)	247-249
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	2
DOIs	https://doi.org/10.1063/1.121779
State	Published - Dec 1 1998
Externally published	Yes

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title = "Valence and atomic size dependent exchange barriers in vacancy-mediated dopant diffusion",

abstract = "First-principles pseudopotential calculations of dopant-vacancy exchange barriers indicate a strong dependency on dopant valence and atomic size, in contrast to current models of vacancy-mediated dopant diffusion. First-row elements (B, C, N) are found to have exchange barriers which are an order of magnitude larger than the assumed value of 0.3 eV (the Si vacancy migration energy). {\textcopyright} 1998 American Institute of Physics.",

author = "Nelson, \{J. S.\} and Schultz, \{P. A.\} and Wright, \{A. F.\}",

year = "1998",

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AU - Nelson, J. S.

AU - Schultz, P. A.

AU - Wright, A. F.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - First-principles pseudopotential calculations of dopant-vacancy exchange barriers indicate a strong dependency on dopant valence and atomic size, in contrast to current models of vacancy-mediated dopant diffusion. First-row elements (B, C, N) are found to have exchange barriers which are an order of magnitude larger than the assumed value of 0.3 eV (the Si vacancy migration energy). © 1998 American Institute of Physics.

AB - First-principles pseudopotential calculations of dopant-vacancy exchange barriers indicate a strong dependency on dopant valence and atomic size, in contrast to current models of vacancy-mediated dopant diffusion. First-row elements (B, C, N) are found to have exchange barriers which are an order of magnitude larger than the assumed value of 0.3 eV (the Si vacancy migration energy). © 1998 American Institute of Physics.

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U2 - 10.1063/1.121779

DO - 10.1063/1.121779

M3 - Article

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VL - 73

SP - 247

EP - 249

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Valence and atomic size dependent exchange barriers in vacancy-mediated dopant diffusion

Abstract

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