Verification of electron doping in single-layer graphene due to H2 exposure with thermoelectric power

Sung Ju Hong; Min Park; Hojin Kang; Minwoo Lee; David Soler-Delgado; Dong Seok Shin; Kyung Ho Kim; Sergey Kubatkin; Dae Hong Jeong; Yung Woo Park; Byung Hoon Kim

doi:10.1063/1.4917470

Verification of electron doping in single-layer graphene due to H2 exposure with thermoelectric power

Sung Ju Hong
, Min Park
, Hojin Kang
, Minwoo Lee
, David Soler-Delgado
, Dong Seok Shin
, Kyung Ho Kim
, Sergey Kubatkin
, Dae Hong Jeong
, Yung Woo Park
, Byung Hoon Kim

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We report the electron doping of single-layer graphene (SLG) grown by chemical vapor deposition (CVD) by means of dissociative hydrogen adsorption. The transfer characteristic showed n-type doping behavior similar to that of mechanically exfoliated graphene. Furthermore, we studied the thermoelectric power (TEP) of CVD-grown SLG before and after exposure to high-pressure H₂ molecules. From the TEP results, which indicate the intrinsic electrical properties, we observed that the CVD-grown SLG is n-type doped without degradation of the quality after hydrogen adsorption. Finally, the electron doping was also verified by Raman spectroscopy.

Original language	English
Article number	142110
Journal	Applied Physics Letters
Volume	106
Issue number	14
DOIs	https://doi.org/10.1063/1.4917470
State	Published - Apr 6 2015
Externally published	Yes

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title = "Verification of electron doping in single-layer graphene due to H2 exposure with thermoelectric power",

abstract = "We report the electron doping of single-layer graphene (SLG) grown by chemical vapor deposition (CVD) by means of dissociative hydrogen adsorption. The transfer characteristic showed n-type doping behavior similar to that of mechanically exfoliated graphene. Furthermore, we studied the thermoelectric power (TEP) of CVD-grown SLG before and after exposure to high-pressure H2 molecules. From the TEP results, which indicate the intrinsic electrical properties, we observed that the CVD-grown SLG is n-type doped without degradation of the quality after hydrogen adsorption. Finally, the electron doping was also verified by Raman spectroscopy.",

author = "Hong, \{Sung Ju\} and Min Park and Hojin Kang and Minwoo Lee and David Soler-Delgado and Shin, \{Dong Seok\} and Kim, \{Kyung Ho\} and Sergey Kubatkin and Jeong, \{Dae Hong\} and Park, \{Yung Woo\} and Kim, \{Byung Hoon\}",

year = "2015",

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doi = "10.1063/1.4917470",

language = "English",

volume = "106",

journal = "Applied Physics Letters",

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T1 - Verification of electron doping in single-layer graphene due to H2 exposure with thermoelectric power

AU - Hong, Sung Ju

AU - Park, Min

AU - Kang, Hojin

AU - Lee, Minwoo

AU - Soler-Delgado, David

AU - Shin, Dong Seok

AU - Kim, Kyung Ho

AU - Kubatkin, Sergey

AU - Jeong, Dae Hong

AU - Park, Yung Woo

AU - Kim, Byung Hoon

PY - 2015/4/6

Y1 - 2015/4/6

N2 - We report the electron doping of single-layer graphene (SLG) grown by chemical vapor deposition (CVD) by means of dissociative hydrogen adsorption. The transfer characteristic showed n-type doping behavior similar to that of mechanically exfoliated graphene. Furthermore, we studied the thermoelectric power (TEP) of CVD-grown SLG before and after exposure to high-pressure H2 molecules. From the TEP results, which indicate the intrinsic electrical properties, we observed that the CVD-grown SLG is n-type doped without degradation of the quality after hydrogen adsorption. Finally, the electron doping was also verified by Raman spectroscopy.

AB - We report the electron doping of single-layer graphene (SLG) grown by chemical vapor deposition (CVD) by means of dissociative hydrogen adsorption. The transfer characteristic showed n-type doping behavior similar to that of mechanically exfoliated graphene. Furthermore, we studied the thermoelectric power (TEP) of CVD-grown SLG before and after exposure to high-pressure H2 molecules. From the TEP results, which indicate the intrinsic electrical properties, we observed that the CVD-grown SLG is n-type doped without degradation of the quality after hydrogen adsorption. Finally, the electron doping was also verified by Raman spectroscopy.

UR - https://www.scopus.com/pages/publications/84927656074

U2 - 10.1063/1.4917470

DO - 10.1063/1.4917470

M3 - Article

SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142110

ER -

Verification of electron doping in single-layer graphene due to H2 exposure with thermoelectric power

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