Vibrational localization in amorphous silicon

R. Biswas; A. M. Bouchard; W. A. Kamitakahara; G. S. Grest; C. M. Soukoulis

doi:10.1103/PhysRevLett.60.2280

Vibrational localization in amorphous silicon

R. Biswas
, A. M. Bouchard
, W. A. Kamitakahara
, G. S. Grest
, C. M. Soukoulis

Research output: Contribution to journal › Article › peer-review

109 Scopus citations

Abstract

Localized vibrational modes have been identified in a number of computer-generated models of amorphous silicon. Networks containing coordination defects give rise to extra resonant states at low frequencies. The densities of states, and dynamic structure factors for localized, resonant, and extented modes, are discussed and compared with recent neutron-scattering data. © 1988 The American Physical Society.

Original language	English
Pages (from-to)	2280-2283
Number of pages	4
Journal	Physical Review Letters
Volume	60
Issue number	22
DOIs	https://doi.org/10.1103/PhysRevLett.60.2280
State	Published - Jan 1 1988
Externally published	Yes

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title = "Vibrational localization in amorphous silicon",

abstract = "Localized vibrational modes have been identified in a number of computer-generated models of amorphous silicon. Networks containing coordination defects give rise to extra resonant states at low frequencies. The densities of states, and dynamic structure factors for localized, resonant, and extented modes, are discussed and compared with recent neutron-scattering data. {\textcopyright} 1988 The American Physical Society.",

author = "R. Biswas and Bouchard, \{A. M.\} and Kamitakahara, \{W. A.\} and Grest, \{G. S.\} and Soukoulis, \{C. M.\}",

year = "1988",

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doi = "10.1103/PhysRevLett.60.2280",

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AU - Biswas, R.

AU - Bouchard, A. M.

AU - Kamitakahara, W. A.

AU - Grest, G. S.

AU - Soukoulis, C. M.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - Localized vibrational modes have been identified in a number of computer-generated models of amorphous silicon. Networks containing coordination defects give rise to extra resonant states at low frequencies. The densities of states, and dynamic structure factors for localized, resonant, and extented modes, are discussed and compared with recent neutron-scattering data. © 1988 The American Physical Society.

AB - Localized vibrational modes have been identified in a number of computer-generated models of amorphous silicon. Networks containing coordination defects give rise to extra resonant states at low frequencies. The densities of states, and dynamic structure factors for localized, resonant, and extented modes, are discussed and compared with recent neutron-scattering data. © 1988 The American Physical Society.

UR - https://www.scopus.com/pages/publications/33645814331

U2 - 10.1103/PhysRevLett.60.2280

DO - 10.1103/PhysRevLett.60.2280

M3 - Article

SN - 0031-9007

VL - 60

SP - 2280

EP - 2283

JO - Physical Review Letters

JF - Physical Review Letters

IS - 22

ER -

Vibrational localization in amorphous silicon

Abstract

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