Abstract
We propose a dislocation adsorption-based mechanism for void growth in metals, wherein a void grows as dislocations from the bulk annihilate at its surface. The basic process is governed by glide and cross-slip of dislocations at the surface of a void. Using molecular dynamics simulations we show that when dislocations are present around a void, growth occurs more quickly and at much lower stresses than when the crystal is initially dislocation-free. Finally, we show that adsorption-mediated growth predicts an exponential dependence on the hydrostatic stress, consistent with the well-known Rice-Tracey equation.
| Original language | English |
|---|---|
| Pages (from-to) | 103-109 |
| Number of pages | 7 |
| Journal | Materials Research Letters |
| Volume | 8 |
| Issue number | 3 |
| DOIs | |
| State | Published - Mar 3 2020 |
| Externally published | Yes |
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