Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser

W. W. Chow; R. P. Schneider; J. A. Lott; K. D. Choquette

doi:10.1063/1.112972

Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser

W. W. Chow
, R. P. Schneider
, J. A. Lott
, K. D. Choquette

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

Original language	English
Pages (from-to)	135-137
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	2
DOIs	https://doi.org/10.1063/1.112972
State	Published - Dec 1 1994
Externally published	Yes

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@article{5bdbbeb511054e619a1698605acfda27,

title = "Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser",

abstract = "The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.",

author = "Chow, \{W. W.\} and Schneider, \{R. P.\} and Lott, \{J. A.\} and Choquette, \{K. D.\}",

year = "1994",

month = dec,

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doi = "10.1063/1.112972",

language = "English",

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pages = "135--137",

journal = "Applied Physics Letters",

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T1 - Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser

AU - Chow, W. W.

AU - Schneider, R. P.

AU - Lott, J. A.

AU - Choquette, K. D.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

AB - The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

UR - https://www.scopus.com/pages/publications/0028460420

U2 - 10.1063/1.112972

DO - 10.1063/1.112972

M3 - Article

SN - 0003-6951

VL - 65

SP - 135

EP - 137

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser

Abstract

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