Why does the hkl: h+k+l = 4n+2 reflections reveal intensity in Si [110]?

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Microscopy and Microanalysis
Pages	662-663
Number of pages	2
Volume	8
Edition	SUPPL. 2
DOIs	https://doi.org/10.1017/s1431927602106313
State	Published - Jan 1 2002
Externally published	Yes

Access to Document

@inproceedings{d8dbf18f896c4811a22c57eda04eceb2,

title = "Why does the hkl: h+k+l = 4n+2 reflections reveal intensity in Si [110]?",

author = "P. Geuens and Carter, \{C. B.\} and \{Van Dyck\}, D.",

year = "2002",

month = jan,

day = "1",

doi = "10.1017/s1431927602106313",

language = "English",

volume = "8",

pages = "662--663",