Abstract
We report wide, continuous, and reversible tunable lasing between 367-337nm from single GaN nanowires by applying hydrostatic pressure up to ~7GPa. The pressure coefficients observed are 40% larger compared with bulk GaN or GaN microstructures. © OSA 2015.
| Original language | English |
|---|---|
| Title of host publication | CLEO: Science and Innovations, CLEO-SI 2015 |
| Pages | 2267 |
| Number of pages | 1 |
| DOIs | |
| State | Published - May 4 2015 |
| Externally published | Yes |
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