Skip to main navigation Skip to search Skip to main content

Wide-temperature-range characterization of 1.55-μm phosphorus-free multiple-quantum-well lasers grown by MBE on InP

  • Sami Adnan Nazib
  • , Troy Hutchins-Delgado
  • , Diana Magana Contreras
  • , Hosuk Lee
  • , Estania Jean Charles
  • , Nathan J. Withers
  • , Sadhvikas J. Addamane
  • , Emma J. Renteria
  • , John Nogan
  • , Ganesh Balakrishnan
  • , Marek Osiński

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Phosphorus-free multiple-quantum-well lasers with In0.53Ga0.47As wells, In0.53Al0.2Ga0.27As barriers, and In0.53Al0.47As claddings have been fabricated as Fabry-Perot devices of different lengths and widths. Their current-voltage and light-current characteristics have been measured over a wide temperature range from 200 K down to 20 K. These data have been analyzed for experimental information on carrier freeze out, gain changes related to temperature, temperature-dependence of series resistance, and prospects for high-performance lasers operating at cryogenic temperatures.
Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume10912
DOIs
StatePublished - Jan 1 2019
Externally publishedYes

Fingerprint

Dive into the research topics of 'Wide-temperature-range characterization of 1.55-μm phosphorus-free multiple-quantum-well lasers grown by MBE on InP'. Together they form a unique fingerprint.

Cite this