ZnO/ Mg_0.2 Zn_0.8 O coaxial nanorod heterostructures for high-performance electronic nanodevice applications

We report on fabrication and electrical characteristics of field effect transistors (FETs) based on ZnO/ Mg_0.2 Zn_0.8 O coaxial nanorod heterostructures. As compared to bare ZnO nanorod FETs, coaxial nanorod heterostructure FETs exhibited the enhanced mobility (∼110 cm2 /V s), superior subthreshold swing (∼200 mV/decade), and negligibly small hysteresis to demonstrate very stable operation of high-performance nanorod FETs. In situ surface passivation and carrier confinement effects provided by heteroepitaxially grown Mg_0.2 Zn_0.8 O shell layer are presumably responsible for the highly enhanced device performance.