Abstract
We performed 1-2 keV focused Au implants into Si, in which the depth was validated by atom-probe tomography. We show that identical results are achievable by either lowering the column voltage, or decelerating ions using bias - while maintaining nanoscale spatial resolution. Furthermore, our data reveal that standard implant modeling overestimates experimental depth by 4.7x and 3.8x at 1 and 2 keV respectively. Finally, we demonstrate how our results pave a way to eV-scale implantation energies, while maintaining high spatial resolution.
Original language | English |
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Title of host publication | International Conference on Metamaterials, Photonic Crystals and Plasmonics |
Pages | 1229-1230 |
Number of pages | 2 |
State | Published - Jan 1 2023 |
Externally published | Yes |