Suppression of Midinfrared Plasma Resonance Due to Quantum Confinement in δ -Doped Silicon

Steve M. Young, Aaron M. Katzenmeyer, Evan M. Anderson, Ting S. Luk, Jeffrey A. Ivie, Scott W. Schmucker, Xujiao Gao, Shashank Misra

Research output: Contribution to journalArticlepeer-review

Abstract

The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum mechanical effects dominate such as P:δ layers - atomically thin sheets of phosphorus dopants in silicon that induce electronic properties beyond traditional doping. Previously it was shown that P:δ layers produce a distinct Drude tail feature in ellipsometry measurements. However, the ellipsometric spectra could not be properly fit by modeling the δ layer as a discrete layer of classical Drude metal. In particular, even for large broadening corresponding to extremely short relaxation times, a plasma resonance feature was anticipated but not evident in the experimental data. In this work, we develop a physically accurate description of this system, which reveals a general approach to designing thin films with intentionally suppressed plasma resonances. Our model takes into account the strong charge-density confinement and resulting quantum mechanical description of a P:δ layer. We show that the absence of a plasma resonance feature results from a combination of two factors: (i) the sharply varying charge-density profile due to strong confinement in the direction of growth; and (ii) the effective mass and relaxation time anisotropy due to valley degeneracy. The plasma resonance reappears when the atoms composing the δ layer are allowed to diffuse out from the plane of the layer, destroying its well-confined two-dimensional character that is critical to its distinctive electronic properties.
Original languageEnglish
JournalPhysical Review Applied
Volume20
Issue number2
DOIs
StatePublished - Aug 1 2023
Externally publishedYes

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